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EIC5964-10
UPDATED 08/21/2007
5.90-6.40 GHz 10-Watt Internally Matched Power FET
2X 0.079 MIN 4X 0.102
FEATURES
* * * * * * * 5.90-6.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at PO = 29.5 dBm SCL 100% Tested for DC, RF, and RTH
0.945 0.803
Excelics
EIC5964-10
0.024 0.580
YYWW
SN
0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095
0.055 0.168
ELECTRICAL CHARACTERISTICS (Ta = 25C)
SYMBOL
P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH
Caution! ESD sensitive device. MIN
39.5 9.0
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 5.90-6.40GHz VDS = 10 V, IDSQ 3200mA Gain at 1dB Compression f = 5.90-6.40GHz VDS = 10 V, IDSQ 3200mA Gain Flatness f = 5.90-6.40GHz VDS = 10 V, IDSQ 3200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 3200mA f = 5.90-6.40GHz Drain Current at 1dB Compression f = 5.90-6.40GHz Output 3rd Order Intermodulation Distortion f = 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L2 VDS = 10 V, IDSQ 65% IDSS f = 6.40GHz VDS = 3 V, VGS = 0 V Saturated Drain Current Pinch-off Voltage Thermal Resistance
3
TYP
40.5 10.0
MAX
UNITS
dBm dB
0.6 37 3200 -43 -46 5800 -2.5 2.5 6400 -4.0 3.0
o
dB %
3600
mA dBc mA V C/W
VDS = 3 V, IDS = 60 mA
Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS Vds Vgs Igf Igr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15V -5V 136mA -27.2mA 40dBm 175C -65C to +175C 50W CONTINUOUS2 10V -4V 40.8mA -6.8mA @ 3dB Compression 175C -65C to +175C 50W
Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4 Revised October 2007
EIC5964-10
UPDATED 08/21/2007
5.90-6.40 GHz 10-Watt Internally Matched Power FET
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50 system, de-embedded to edge of package) VDS = 10 V, IDSQ 3200mA
S11 and S22
0.
Swp Max 6.8GHz
2. 0
0.8
20
1.0
S21 and S12
-1.0
-0.8
-0
6
.6
S21 and S12 (dB)
-4
0.2
.0
-10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0.
-0.8
-1.0
S[2,2] * EIC5964-10
-0
.0 -2
.6
FREQ (GHz)
--- S11 --MAG ANG
5.00 5.25 5.50 5.75 6.00 6.25 6.50 6.75 7.00 7.25 7.50
0.842 0.770 0.668 0.535 0.378 0.226 0.243 0.423 0.573 0.675 0.750
-10.380 -36.270 -66.150 -102.210 -148.060 142.100 34.670 -32.680 -76.790 -110.330 -137.290
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
-3 .0
S[1,1] * .4 -0 EIC5964-10
0 3. 2. 0
4
Swp Min 5.5GHz
-4 .0 -5. 0
2 -0.
-10.0
2 -0.
-5. 0
4
-3 .0
. -0
.0 -2
0. 4
0 3.
10
4. 0
5.0
0
10.0
DB(|S[2,1]|) * EIC5964-10 DB(|S[1,2]|) * EIC5964-10
-10
10.0
4.
5.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
0
0
10.0
0.2
-20
-30 5.5 6 Frequency (GHz) 6.5 6.8
0. 6
0.8
1.0
--- S21 --MAG ANG
--- S12 --MAG ANG
--- S22 --MAG ANG
2.138 2.452 2.749 3.044 3.268 3.354 3.165 2.662 2.037 1.498 1.090
85.680 52.620 17.860 -18.590 -57.830 -99.660 -144.200 171.730 131.380 95.780 64.300
0.066 0.075 0.090 0.104 0.118 0.126 0.123 0.107 0.084 0.066 0.050
23.190 -8.650 -42.660 -77.630 -116.340 -157.830 159.460 116.550 77.710 45.490 12.690
0.279 0.338 0.414 0.459 0.453 0.407 0.366 0.395 0.470 0.549 0.624
-146.210 160.980 119.050 82.070 42.110 -5.740 -66.250 -128.840 -176.150 151.630 128.540
page 2 of 4 Revised October 2007
EIC5964-10
UPDATED 08/21/2007
5.90-6.40 GHz 10-Watt Internally Matched Power FET
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
60
THIRD-ORDER INTERCEPT POINT IP3
50 Total Power Dissipation (W) Potentially Unsafe Operating Region
IP3 = Pout + IM3/2 f1 or f2
40
Pout [S.C.L.] (dBm)
Pout Pin IM3
30 Safe Operating Region
20
IM3
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
10
(2f2 - f1) or (2f1 - f2)
0 0 25 50 75 100 125 Case Temperature (C) 150 175
Pin [S.C.L.] (dBm)
Typical Power Data (VDS = 10 V, IDSQ = 3200 mA)
42 41
P-1dB (dBm)
Typical IM3 Data (VDS = 10 V, IDSQ 65% IDSS)
15 14
G-1dB (dB)
P-1dB & G-1dB vs Frequency
IM3 vs Output Power
-15 -20 -25 -30 f1 = 6.16 GHz, f2 = 6.15 GHz
40 39 38 37 36 5.8 5.9 6.0 6.1 6.2 6.3 6.4 6.5
Frequency (GHz)
13 P-1dB (dBm) G-1dB (dB) 12 11 10 9
IM3 (dBc)
-35 -40 -45 -50 -55 -60 -65 24 25 26 27 28 29 30 31 32 33 34 35 36 37
IM3 (dBc)
Pout [S.C.L.] (dBm)
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4 Revised October 2007
EIC5964-10
UPDATED 08/21/2007
5.90-6.40 GHz 10-Watt Internally Matched Power FET
ORDERING INFORMATION
Part Number EIC5964-10
Notes:
Packages Hermetic
Grade1 Industrial
fTest (GHz) 5.90-6.40GHz
P1dB (min) 39.5
IM3 (min)2 -43
1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in "Electrical Characteristics" table.
DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 4 of 4 Revised October 2007

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